The fabrication of microrelief structures in evaporated Ag/a-Ge30S70 layers

Authors
Eneva, J Gushterov, A Tomerova, B Mednikarov, B
Citation
J. Eneva et al., The fabrication of microrelief structures in evaporated Ag/a-Ge30S70 layers, J MAT S-M E, 10(7), 1999, pp. 529-531
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
10
Issue
7
Year of publication
1999
Pages
529 - 531
Database
ISI
SICI code
0957-4522(199909)10:7<529:TFOMSI>2.0.ZU;2-R
Abstract
The photo-stimulated diffusion of Ag in a-germanium sulfide is studied to o btain low relief resist masks for the purposes of diffractive optics. The t hickness of the photodoped layer is found to be proportional to the illumin ation energy. An average chemical composition of the photodoping product, r eproducible and constant in all photodoped areas is observed. This indicate s the occurrence of a stoichiometric reaction as well as a step-like mechan ism for the diffusion of Ag into the chalcogenide.