InSb optical cone concentrators are modelled to assess their optical perfor
mance in positive and negative emission modes. The output distribution from
the active layer is shown to be isotropic for thin active regions, tending
towards Lambertian distribution as the layer thickness increases. Refracti
on from the emitting surface is shown to make the distribution more Lambert
ian. Optical efficiencies of straight-sided and Winston cone concentrators
are modelled using a ray-tracing program, and those of straight-sided cones
also determined using an analytical approximation, which allows use of the
distribution derived earlier. The effect on the active layer thickness on
the positive and negative emission is also determined. Normal light emittin
g diode structures are found to be poor positive emitters and to draw large
currents when used as negative emitters. A Winston cone of area gain equal
to n(2) is found to be the best option for devices required to work in bot
h positive and negative modes. Intermediate structures are also considered.
The optimum active layer thickness is derived for three emitter configurat
ions.