SiO2 films from tetraethoxysilane-based LPCVD: An experimental investigation of the by-prodoct-inhibited deposition mechanism

In contrast to other low-pressure chemical vapor deposition (LPCVD) process es for SiO2 films, the deposition from tetraethoxysilane (TEOS) gas mixture s Seems to be essentially controlled by by-product inhibition. We report an experimental study aimed at the verification of such a mechanism. Ethanol was investigated as a possible inhibitor. The results cannot be explained b y by-product inhibition alone. We therefore conclude that the by-product-in hibited deposition from the primary reactant TEOS occurs in par allel with a deposition from a second precursor formed in the gas phase (intermediate product). (C) 1999 The Electrochemical Society. S0013-4651(98)12-052-9. All rights reserved.