Epitaxial growth and nitrogen radical doping of CdZnTe

Epitaxial cadmium zinc telluride (CdZnTe) films have been grown on GaAs(100 ) substrates by the remote plasma-enhanced metallorganic chemical vapor dep osition method. The growth was carried out at a low substrate temperature o f 200 degrees C. In this system, we obtained Cd1-xZnxTe epitaxial films wit h composition x in the range 0-1. When nitrogen radicals were introduced in addition to hydrogen radicals, e-type CdZnTe films with nitrogen accepters were obtained. Although as-grown samples showed high resistivity of more t han 10(5) Ohm cm, after annealing treatment at 600 degrees C for 10 min, th e resistivity and carrier concentration at an x value of 0.96 were measured as 3.7 X 10(-2) Ohm cm and 1.2 x 10(19) cm(-3). respectively. (C) 1999 The Electrochemical Society. S0013-4651(98)98-11-061-3. All rights reserved.