Reactive ion etching for mesa structuring in HgCdTe

Citation
Epg. Smith et al., Reactive ion etching for mesa structuring in HgCdTe, J VAC SCI A, 17(5), 1999, pp. 2503-2509
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2503 - 2509
Database
ISI
SICI code
0734-2101(199909/10)17:5<2503:RIEFMS>2.0.ZU;2-#
Abstract
Both wet chemical and dry plasma etching techniques have been investigated for mesa structuring in n- and p-type HgCdTe. Scanning electron microscopy (SEM) confirms the isotropic nature of a bromine-based wet chemical etching solution, and the anisotropic profile that results from reactive ion etchi ng. Laser-beam-induced-current (LBIC) measurements reveal no significant mo difications to the electrical properties for chemically etched HgCdTe mater ial, but clearly demonstrate a p- to n-type conversion in p-type samples an d n(+) doping in n-type samples for reactive ion etching (RIE) (processing conditions: 400 mTorr, CH4/5H(2), 0.4 W/cm(2)). LBIC measurements following low-temperature (200 degrees C) mercury annealing of RIE-processed samples indicate the full restoration of electrical properties to that of the init ial as-grown wafers, thus preserving the beneficial aspects of RIE for anis otropic mesa structuring in HgCdTe. (C) 1999 American Vacuum Society. [S073 4-2101(98)05805-4].