Two-dimensional CT images of two-frequency capacitively coupled plasma

Two-dimensional images of two-frequency capacitively coupled plasma (2f-CCP ) in Ar and Ar/CF4(5%) in an axisymmetric parallel plate reactor are invest igated by using 2D-t optical emission spectroscopy. Spatially averaged elec tron density is obtained by :microwave interferometry. Results are presente d in the form of 2D profiles of the net excitation rate of Ar(3p(5))(<(epsi lon)over bar>(ex) = 14.5 eV) and Ar+ (4p(4)D(7/2))( epsilon(ex) = 35.0 eV) used as a probe. Large area uniformity of plasma production driven at very high frequency (VHF) (100 MHz) and that driven at high frequency (HF) (13.5 6 MHz) at low pressure (similar to 25 mTorr) are compared and discussed und er a low frequency (LF) (700 kHz) bias voltage on the wafer. The time modul ation of the net excitation rate and the electron density indicate that the LF bias is considerably influential in the production of the plasma and in the confinement of high energy electrons at HF. Functional separation betw een plasma production in a gas phase and ion acceleration to the wafer is a chieved in 2f-CCP excited at VHF (100 MHz). The addition of a small amount of CF4 to the Ar plasma improves the uniformity of the radial profile of th e excitation at HF (13.56 MHz). (C) 1999 American Vacuum Society. [S0734-21 01(99)10605-5].