Oxynitridation of cubic silicon carbide (100) surfaces

The interaction of nitric oxide (NO) on Si-rich beta-SiC(100) 3x2 surface r econstruction is investigated by photoemission spectroscopy using Al K alph a (1486.6 eV) and Zr M zeta (151.4 eV) x-ray lines at Si 2p, C 1s, N 1s and O 1s core levels. NO exposures are performed at sample temperatures rangin g from 25 to 1000 degrees C. The initial sticking coefficient of the NO mol ecules is found to be already significant at room temperature, with a disso ciative adsorption. resulting in Si oxynitride products as SiOxNy. The amou nt of oxynitride is significantly increased at surface temperatures of 500 degrees C and above. in addition, temperature is found to favor the formati on nitrogen-rich SiOxNy oxynitride products. Thermal oxynitridation on the 3X2 reconstruction results in a SiOxNy/beta- SiC(100) interface. (C) 1999 A merican Vacuum Society. [S0734-2101(98)00805-2].