Bi/Sb superlattices grown by molecular beam epitaxy

Citation
Sl. Cho et al., Bi/Sb superlattices grown by molecular beam epitaxy, J VAC SCI A, 17(5), 1999, pp. 2987-2990
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2987 - 2990
Database
ISI
SICI code
0734-2101(199909/10)17:5<2987:BSGBMB>2.0.ZU;2-E
Abstract
Epitaxial Bi/Sb superlattices have been grown by molecular beam epitaxy on CdTe(111)B substrates. The superlattice modulation wavelength was in the ra nge of 20-200 Angstrom. Structural properties have been investigated using in situ reflection high-energy electron diffraction (RHEED), theta - 2 thet a x-ray diffraction (XRD) analysis, and high-resolution transmission electr on microscopy (TEM). The streaked RHEED patterns of Bi on Sb (or Sb on Bi) with clear Kikuchi lines indicate layer-by-layer growth with good epitaxial layer quality. The narrow XRD rocking curves for the central and the satel lite peaks suggest that the interfaces are very sharp and that the superlat tice periods do not fluctuate, which is demonstrated in this article by cro ss-sectional TEM. (C) 1999 American Vacuum Society. [S0734-2101(99)01905-3] .