Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

Polycrystalline silicon is grown at a temperature of 300 degrees C by micro wave-excited plasma enhanced chemical vapor deposition using SiH4/Xe. The g rain size measured by x-ray diffraction is about 25 nm. High-density (> 10( 12) cm(-3)) plasma having very low electron temperature (<1 eV) is excited by microwave irradiation using radial line slot antenna. We present the imp lementation of this system for the growth of poly-Si. Low-energy (3 eV), hi gh-flux ion bombardment utilizing xenon ion on a growing film surface activ ates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures. ( C) 1999 American Vacuum Society. [S0734-2101(99)21704-6].