Mn2+-doped Zn2SiO4 phosphor films were deposited on silicon and quartz glas
s substrates by sol-gel method (dip-coating). The variations of sol viscosi
ty with time, him thickness with the number of layers were investigated in
the Zn2SiO4:Mn system. The results of XRD and IR showed that the Zn2SiO4:Mn
films remained amorphous below 700 degrees C and crystallized completely a
round 1000 degrees C. From AFM studies, it was observed that the grains of
0.5-0.8 mu m in size packed closely in Zn2SiO4:Mn films, which were uniform
and crack free. The luminescence properties of Zn2SiO4:Mn films were chara
cterized by absorption, excitation and emission spectra, as well as lumines
cence decay. (C) 1999 Published by Elsevier Science S.A. All rights reserve
d.