Sol-gel synthesis and characterization of Zn2SiO4 : Mn phosphor films

Citation
J. Lin et al., Sol-gel synthesis and characterization of Zn2SiO4 : Mn phosphor films, MAT SCI E B, 64(2), 1999, pp. 73-78
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
64
Issue
2
Year of publication
1999
Pages
73 - 78
Database
ISI
SICI code
0921-5107(19990930)64:2<73:SSACOZ>2.0.ZU;2-O
Abstract
Mn2+-doped Zn2SiO4 phosphor films were deposited on silicon and quartz glas s substrates by sol-gel method (dip-coating). The variations of sol viscosi ty with time, him thickness with the number of layers were investigated in the Zn2SiO4:Mn system. The results of XRD and IR showed that the Zn2SiO4:Mn films remained amorphous below 700 degrees C and crystallized completely a round 1000 degrees C. From AFM studies, it was observed that the grains of 0.5-0.8 mu m in size packed closely in Zn2SiO4:Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4:Mn films were chara cterized by absorption, excitation and emission spectra, as well as lumines cence decay. (C) 1999 Published by Elsevier Science S.A. All rights reserve d.