LOW-TEMPERATURE GROWTH AND RELIABILITY OF FERROELECTRIC MEMORY CELL INTEGRATED ON SI WITH CONDUCTING BARRIER STACK

Polycrystalline LSCO/PNZT/LSCO ferroelectric capacitor heterostructure s were grown by pulsed laser deposition using a composite conducting b arrier layer of Pt/TiN on poly Si/Si substrate, The growth of the ferr oelectric heterostructure is accomplished at a temperature in the rang e of 500-600 degrees C, This integration results in a 3-dimensional st acked capacitor-transistor geometry which is important for high densit y nonvolatile memory (HDNVM) applications, Transmission electron micro scopy shows smooth substrate-film and film-film interfaces without any perceptible interdiffusion, The ferroelectric properties and reliabil ity of these integrated capacitors were studied extensively at room te mperature and 100 degrees C for different growth temperatures. The cap acitors exhibit excellent reliability, both at room temperature and at elevated temperatures, making them very desirable for HDNVM applicati ons.