PREPARATION OF SEMICONDUCTIVE SRTIO3 THIN-FILMS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AND THEIR ELECTRICAL-PROPERTIES

Insulating epitaxially grown SrTiO3 thin films were prepared on (100)M gO substrates by metal-organic chemical vapor deposition (MOCVD). Semi conductive SrTiO3 thin films were obtained by the rapid cooling after reheating in reduction atmosphere, The microstructure, crystal structu re, and electrical properties of these films were investigated. The el ectrical properties varied by the composition of films and heat-treatm ent conditions, i.e., the heating temperature, the oxygen partial pres sure, and the cooling rate after the annealing. Change of the resistiv ity of the film was attributed to that of the carrier concentration. M obility of films was unchanged, and the value was almost the same orde r of that of bulks. The lowest resistivity of 0.1 Ohm.cm was obtained when a sample of Ti/Sr = 1.0 was heated at 1200 degrees C under 10(-15 ) Pa of P-O2 and then rapidly cooled. This value is similar to that of bulks (10(0)-10(-1) Ohm.cm).