Vacancy loops and stacking-fault tetrahedra in copper - II. Growth, shrinkage, interactions with point defects and thermal stability

Citation
Yn. Osetsky et al., Vacancy loops and stacking-fault tetrahedra in copper - II. Growth, shrinkage, interactions with point defects and thermal stability, PHIL MAG A, 79(9), 1999, pp. 2285-2311
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
ISSN journal
13642804 → ACNP
Volume
79
Issue
9
Year of publication
1999
Pages
2285 - 2311
Database
ISI
SICI code
1364-2804(199909)79:9<2285:VLASTI>2.0.ZU;2-3
Abstract
The interaction of vacancy loops (VLs) and stacking-fault tetrahedra (SFTs) with point defects and the processes of growth and shrinkage of VLs and SF Ts have been studied using computer simulation and a long-range pair potent ial for copper. It was found that there is a qualitative difference in the mechanism of growth of VLs and SFTs. While VLs can grow without limitations , the growth of SFTs containing more than 91 vacancies is rather difficult. The structure of small vacancy loops (N-v less than or equal to 217; N-v i s the number of vacancies) may change during its growth and the loop can tr ansform, in turn, to a completely dissociated loop with six small truncated SFTs, a faulted Frank loop with Burgers vector b = 1/3(111) and several in termediate configurations of a partly dissociated loop. The problem of esti mation the binding energy of a vacancy in a VL or SFT as a function of thei r size has been discussed and several approximations have been tested. Furt hermore, the thermal stability of small VLs of different shapes has been st udied by molecular dynamics and the VL-to-SFT transformation has been obser ved.