Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates

The strained InGaAs/AlGaAs layer structures have been grown on GaAs(1 0 0) and(3 1 1)B substrates in a horizontal low-pressure metalorganic vapor-phas e epitaxy system at a temperature of 800 degrees C. In the surface observat ion using a high-resolution scanning electron microscope, we have found tha t surface deformation phenomena induced by electron-beam irradiation in str ained In0.36Ga0.64As,/Al0.3Ga0.7As layers on GaAs (1 0 0) and (3 1 1)B subs trates. The change of the surface morphology was observed in real time on t he display of SEM with the accelerating voltage of 30 kV and the irradiated time of 60-120 s. The surface deformation through mass transport seems to be the cause of the residual strain relaxation due to electron-beam irradia tion. (C) 1999 Elsevier Science B.V. All rights reserved.