High-resolution transmission electron microscopy/analytical electron microscopy characterization of epitaxial oxide multilayers fabricated by laser ablation on biaxially textured Ni
Ey. Sun et al., High-resolution transmission electron microscopy/analytical electron microscopy characterization of epitaxial oxide multilayers fabricated by laser ablation on biaxially textured Ni, PHYSICA C, 321(1-2), 1999, pp. 29-38
Microstructural characterization of rolling-assisted biaxially textured sub
strates (RABiTS) was conducted using high-resolution transmission electron
microscopy (TEM) and high-resolution analytical electron microscopy (AEM).
RABiT substrates with a multilayer configuration YSZ (0.2 mu m)/CeO2 (0.9 m
u m)/Ni (125 mu m) were studied. The substrates were fabricated by epitaxia
l deposition of oxide layers using laser ablation on biaxially textured Ni
substrates. High critical current density YBa2Cu3Ox thick films have been f
abricated on such RABiT substrates and typically yield J(c) values over 1 M
A/cm(2). TEM examinations show that a reaction layer 10-40 nm thick is form
ed at the CeO2/Ni interface. Detailed microstructural and chemical analyses
indicate that the layer is epitaxial {001} nickel oxide on {001} Ni. The C
eO2 layer is found to consist of three distinct morphologies corresponding
to the growth atmosphere during the deposition. The YSZ layer exhibited a c
olumnar structure aligned along the [100] axis, with little or no orientati
on variation between the columns. The interface between the YSZ and CeO2 la
yers is atomically sharp and neither interdiffusion of elements nor an inte
rfacial reaction layer is observed, Implications of these results on proces
sing are discussed. (C) 1999 Published by Elsevier Science B.V. All rights
reserved.