Predictability of minimum noise in electron transport through a disorderedsemiconductor

We present an inverse method for electron transport which allows one to min imize the value of shut noise for a given value of the conductance by optim izing the spatial structure of a disordered semiconductor region. The metho d is based on the Green's function approach which is usually applied to the direct transport problem. A specific experimentally realizable example of a two-dimensional disordered semiconductor is presented which demonstrates the method of minimization of shot noise for insulator, metallic, and trans itional conductance regions. (C) 1999 Elsevier Science B.V. All rights rese rved.