Intrinsic gap states in semiconductor nanocrystals

Citation
Pc. Sercel et al., Intrinsic gap states in semiconductor nanocrystals, PHYS REV L, 83(12), 1999, pp. 2394-2397
Citations number
20
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
12
Year of publication
1999
Pages
2394 - 2397
Database
ISI
SICI code
0031-9007(19990920)83:12<2394:IGSISN>2.0.ZU;2-I
Abstract
We demonstrate the existence of intrinsic gap states in bare and capped sem iconductor nanocrystals within multiband effective mass theory. These state s originate from Shockley-like surface states which, in small nanocrystals, extend over the entire crystal volume, facilitating their observation in a bsorption as well as in photoluminescence. The conditions under which such intrinsic states might be observed are discussed in light of the theory dev eloped and analysis of the band parameters of direct gap semiconductors.