Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates

Authors
Astakhov, GV Kochereshko, VP Vasil'ev, DG Evtikhiev, VP Tokranov, VE Kudryashov, IV Mikhailov, GV
Citation
Gv. Astakhov et al., Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates, SEMICONDUCT, 33(9), 1999, pp. 988-990
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
9
Year of publication
1999
Pages
988 - 990
Database
ISI
SICI code
1063-7826(199909)33:9<988:POIQDG>2.0.ZU;2-8
Abstract
The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substr ate with a disorientation in the [010] direction are studied. A redistribut ion of the photoexcited carriers among different groups of dots under the i nfluence of the magnetic field is observed. The concentration of quantum do ts is determined by analyzing the data. (C) 1999 American Institute of Phys ics. [S1063- 7826(99)01509-4].