Wide-gap semiconductors for high-power electronics

Authors
Lebedev, AA Chelnokov, VE
Citation
Aa. Lebedev et Ve. Chelnokov, Wide-gap semiconductors for high-power electronics, SEMICONDUCT, 33(9), 1999, pp. 999-1001
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
9
Year of publication
1999
Pages
999 - 1001
Database
ISI
SICI code
1063-7826(199909)33:9<999:WSFHE>2.0.ZU;2-6
Abstract
The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined. It is shown that at present silico n carbide remains the most promising material for high-temperature, radiati on-resistant, high-power electronics. Certain factors involving a wide comm ercial adoption of SiC-based devices are examined. (C) 1999 American Instit ute of Physics. [S1063- 7826(99)01809-8].