InGaAs/InP heterostructures with strained quantum wells and quantum dots (lambda=1.5-1.9 mu m)

Strongly strained InxGa1-xAs/In0.53Ga0.47As/InP heterostructures with indiu m content x=0.69-1.0 in the active region were investigated experimentally and theoretically. Two types of structures were obtained by vapor-phase epi taxy from metalorganic compounds: 1) with isolated compression-strained qua ntum wells and 2) with self-organized nanosize InAs clusters (quantum dots) . The temperature dependence of the quantum radiation efficiency of samples with quantum wells in the temperature range 77-265 K is characterized by T -0=43 K. One reason for the low value of T-0 is electron delocalization in the active region. The maximum radiation wavelength obtained in structures with quantum dots is 1.9 mu m at 77 K. (C) 1999 American Institute of Physi cs. [S1063-7826(99)02109-2].