Application of superfast (10(2)-10(3) degrees C/s) cooling of a solution-melt in the liquid-phase epitaxy of semiconductors

Authors
Abramov, AV Deryagin, NG Tret'yakov, DN
Citation
Av. Abramov et al., Application of superfast (10(2)-10(3) degrees C/s) cooling of a solution-melt in the liquid-phase epitaxy of semiconductors, SEMICONDUCT, 33(9), 1999, pp. 1030-1033
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
9
Year of publication
1999
Pages
1030 - 1033
Database
ISI
SICI code
1063-7826(199909)33:9<1030:AOS(DC>2.0.ZU;2-K
Abstract
Use of a superhigh (10(2)-10(3) degrees C/s) rate of cooling of a solution- melt substantially extends the possibilities of the method of liquid-phase epitaxy. In the case of the system Al-Ga-As we demonstrate the influence of superfast cooling on the main parameters of the as-grown layers, such as t heir thickness, composition, and carrier concentration. Possibilities of th e method for obtaining various semiconductor heterostructures with high (up to 12%) lattice mismatch of the contacting materials are considered. (C) 1 999 American Institute of Physics. [S1063-7826(99)02809-4].