Av. Abramov et al., Application of superfast (10(2)-10(3) degrees C/s) cooling of a solution-melt in the liquid-phase epitaxy of semiconductors, SEMICONDUCT, 33(9), 1999, pp. 1030-1033
Use of a superhigh (10(2)-10(3) degrees C/s) rate of cooling of a solution-
melt substantially extends the possibilities of the method of liquid-phase
epitaxy. In the case of the system Al-Ga-As we demonstrate the influence of
superfast cooling on the main parameters of the as-grown layers, such as t
heir thickness, composition, and carrier concentration. Possibilities of th
e method for obtaining various semiconductor heterostructures with high (up
to 12%) lattice mismatch of the contacting materials are considered. (C) 1
999 American Institute of Physics. [S1063-7826(99)02809-4].