Temperature dependence of tunnel conductance in ferromagnetic double barrier junctions

Citation
J. Inoue et al., Temperature dependence of tunnel conductance in ferromagnetic double barrier junctions, SURF SCI, 438(1-3), 1999, pp. 336-340
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
438
Issue
1-3
Year of publication
1999
Pages
336 - 340
Database
ISI
SICI code
0039-6028(19990910)438:1-3<336:TDOTCI>2.0.ZU;2-5
Abstract
The spin-dependent conductance and magnetoresistance (MR) in ferromagnetic double junctions are studied theoretically, taking into account discrete en ergy levels and a finite spin relaxation time. The basic results are applie d to hybrid tunnel junctions, in which nano-scale grains ate embedded in th e tunnel barrier. With increasing size quantization and spin relaxation tim e the MR is found to be enhanced at low temperatures. (C) 1999 Elsevier Sci ence B.V. All rights reserved.