Numerical simulation of the discharge in d.c. magnetron sputtering

Citation
E. Shidoji et al., Numerical simulation of the discharge in d.c. magnetron sputtering, THIN SOL FI, 351(1-2), 1999, pp. 37-41
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
351
Issue
1-2
Year of publication
1999
Pages
37 - 41
Database
ISI
SICI code
0040-6090(19990830)351:1-2<37:NSOTDI>2.0.ZU;2-2
Abstract
Numerical simulation of d.c. magnetron discharge for sputtering in Ar is pe rformed using a hybrid model consisting of a particle model and a fluid mod el. The various discharges with different anode's size are simulated to inv estigate the effect of film conductivity on the anode and the substrate. In the case of a large area anode formed by the deposition of conductive mate rial, the plasma potential becomes higher, suppressing the excess electron flux to the large anode. In the case of a small anode formed by an non-cond uctive film deposition, the plasma potential becomes lower, dragging a larg e number of electrons into the small anode. The low plasma potential lowers the potential difference between the cathode and plasma, and the productio n rate of an electron-ion pair decreases in the cathode sheath region under a constantly applied voltage mode, therefore decreasing the plasma density . It is shown that the plasma potential and the density changes with film c onductivity or anode size under a constantly applied voltage. High energy i on injection to the central part of the glass substrate is estimated at the beginning of the film deposition This implies that the film property at th e central part of the non-conductive substrate will differ from the one at the other position due to the difference of the ion impact to the substrate . (C) 1999 Elsevier Science S.A. All rights reserved.