Citation
M. Ruske et al., Properties of SnO2 films prepared by DC and MF reactive sputtering, THIN SOL FI, 351(1-2), 1999, pp. 146-150
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
351
Issue
1-2
Year of publication
1999
Pages
146 - 150
Database
ISI
SICI code
0040-6090(19990830)351:1-2<146:POSFPB>2.0.ZU;2-5
Abstract
By applying medium frequency (MF) powered twin magnetron arrangements, typi
cal problems of reactive direct current (DC) sputter deposition of electric
ally insulating materials can be solved. Inherent properties of this new de
position method are a high ion bombardment of the substrate during depositi
on and the possibility to deposit transparent layers in the transition mode
of the cathode characteristic. This leads to modified film properties comp
ared to the DC method. This is shown here for the case of SnO2. (C) 1999 El
sevier Science S.A. All rights reserved.