Composite germanium/C : H films prepared by DC unbalanced magnetron sputtering

Composite Ge/C:H films (germanium doped hard plasma polymer (C:H)) have bee n deposited using unbalanced planar magnetron equipped with germanium/graph ite target and operated in argon/n-hexane gas mixture. The composition of t he deposited films was determined by Rutherford back scattering (RBS), elas tic recoil detection (ERD) and X-ray photoelectron spectroscopy (XPS) analy tical methods. Contents of germanium from 0 up to 30 at,% was confirmed wit h rather homogenous distribution of germanium through the cross-section of the composite films. Transmission electron microscopy (TEM) investigation o f the samples revealed that germanium forms clusters with a maximum diamete r of 2 nm embedded in C:H and GeC alloy matrix. An optical gap ranging from 1.9 to 1.0 eV with corresponding refractive index ranging from 2 to 3 were determined. DC electrical properties were measured in the planar electrode s -composite film-configuration. The electrical conduction is strongly depe ndent on the germanium content and on the substrate temperature. Current-vo ltage characteristics are linear at low electrical field and become superli near at higher field. (C) 1999 Elsevier Science S.A, All rights reserved.