Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials

Citation
M. Ruske et al., Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials, THIN SOL FI, 351(1-2), 1999, pp. 158-163
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
351
Issue
1-2
Year of publication
1999
Pages
158 - 163
Database
ISI
SICI code
0040-6090(19990830)351:1-2<158:POSASL>2.0.ZU;2-J
Abstract
Si3N4 and SiO2 layers can be deposited by reactive sputtering in a stable m anner by using MF twin magnetron systems, The increasing demand for these m aterials for industrial applications makes it necessary to find new solutio ns for the target material. The up to now mostly used boron-doped poly-crys talline silicon suffers from serious drawbacks. In this paper, properties o f Si3N4, and SiO2 layers deposited by using casted Si/Al alloy targets as w ell as conventional Si targets are compared. The advantages of using casted alloy targets are presented, (C) 1999 Elsevier Science S.A. All rights res erved.