Saturated adsorption of PH3 on Si(100): P and its application to digital control of phosphorus coverage on Si(100) surface

Authors
Tsukidate, Y Suemitsu, M
Citation
Y. Tsukidate et M. Suemitsu, Saturated adsorption of PH3 on Si(100): P and its application to digital control of phosphorus coverage on Si(100) surface, APPL SURF S, 151(1-2), 1999, pp. 148-152
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
151
Issue
1-2
Year of publication
1999
Pages
148 - 152
Database
ISI
SICI code
0169-4332(199909)151:1-2<148:SAOPOS>2.0.ZU;2-R
Abstract
Si(100) surface, when fully saturated with PH3 at room temperature, shows u p theta(P) = 0.25 ML and theta(H) = 0.75 ML. Based on this fact, a method h as been developed to digitally control the phosphorus coverage as theta(P) = 1 - (0.75)(n), where n is the number of sequence consisting of saturated adsorption of PH3 and thermal desorption of H-2. The good agreement of the experiment with this formula indicates that PH3 molecules do not chemisorb at P sites at room temperatures. (C) 1999 Elsevier Science B.V. All rights reserved.