Electric field gradients of acceptor-donor pairs in semiconductors

Authors
Burchard, A Deicher, M Fedoseyev, VN Forkel-Wirth, D Magerle, R Mishin, VI Steiner, D Stotzler, A Weissenborn, R Wichert, T
Citation
A. Burchard et al., Electric field gradients of acceptor-donor pairs in semiconductors, HYPER INTER, 121(1-8), 1999, pp. 389-395
Citations number
12
Categorie Soggetti
Physics
Journal title
HYPERFINE INTERACTIONS
ISSN journal
03043843 → ACNP
Volume
121
Issue
1-8
Year of publication
1999
Pages
389 - 395
Database
ISI
SICI code
0304-3843(1999)121:1-8<389:EFGOAP>2.0.ZU;2-N
Abstract
The interaction between substitutional and interstitial donors and single o r double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex format ion between substitutional donors (As, P) and different radioactive accepto rs (In-111, Cd-111m, Cd-117) has been observed. The formation of Cd-hydroge n pairs using either Cd-111m or Cd-117 is discussed for GaAs, InP, and InAs .