Titanium dioxide (TiO2)-based gate insulators

Titanium dioxide has been deposited on silicon for use as a high-permittivi ty gate insulator in an effort to produce low-leakage films with oxide equi valent thicknesses below 2.0 nm. Excellent electrical characteristics can b e achieved, but TEM and electrical measurements have shown the presence of a low-resistivity interfacial layer that we take to be SiO2. The leakage cu rrent follows several mechanisms depending on the bias voltage, Reasonably good agreement has been seen between current-voltage measurements and a 1D quantum transport model.