Analysis of capacitor breakdown mechanisms due to crystal-originated pits

Authors
Ono, T Rozgonyi, G Horie, H Miyazaki, M Tsuya, H
Citation
T. Ono et al., Analysis of capacitor breakdown mechanisms due to crystal-originated pits, IEEE ELEC D, 20(10), 1999, pp. 504-506
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
10
Year of publication
1999
Pages
504 - 506
Database
ISI
SICI code
0741-3106(199910)20:10<504:AOCBMD>2.0.ZU;2-R
Abstract
The extent to which crystal originated defect pits (COPs) will enhance capa citor B-mode failures has been examined as a function of substrate carrier type/dopant concentration and bias model (accumulation/inversion). An unexp ected immunity to COPs, found for n-type capacitors biased into accumulatio n, could be readily explained by invoking Fowler-Nordheim (FN) tunneling va riations due to the morphology of the capacitor electrodes, as revealed by cross-sectional TEM on simulated COPs formed by KOH anisotropic etching.