The extent to which crystal originated defect pits (COPs) will enhance capa
citor B-mode failures has been examined as a function of substrate carrier
type/dopant concentration and bias model (accumulation/inversion). An unexp
ected immunity to COPs, found for n-type capacitors biased into accumulatio
n, could be readily explained by invoking Fowler-Nordheim (FN) tunneling va
riations due to the morphology of the capacitor electrodes, as revealed by
cross-sectional TEM on simulated COPs formed by KOH anisotropic etching.