A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics

Authors
Liu, WC Wang, WC Chen, JY Pan, HJ Cheng, SY Thei, KB Chang, WL
Citation
Wc. Liu et al., A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics, IEEE ELEC D, 20(10), 1999, pp. 510-513
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
10
Year of publication
1999
Pages
510 - 513
Database
ISI
SICI code
0741-3106(199910)20:10<510:ANINHB>2.0.ZU;2-0
Abstract
A new and interesting negative-differential-resistance heterojunction bipol ar transistor (NDR-HBT) based on the InP/InAlGaAs material system is fabric ated successfully and demonstrated. Due to the employment of narrow base an d delta-doped sheet at emitter-base (E-B) heterojunction, the significant a nd interesting topee-shaped current-voltage (I-V) characteristics are obser ved at low current regime. The peak-to-valley current ratio (PVCR) up to 11 in the NDR loci is found. In the higher current regimes, on the other hand , NDR phenomena disappear and the studied device acts as a normal bipolar t ransistor. These interesting properties are believed to be attributed mainl y to the modulation of potential spike resulting from the specified device structure.