Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile

Authors
Cheng, BH Rao, VR Woo, JCS
Citation
Bh. Cheng et al., Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile, IEEE ELEC D, 20(10), 1999, pp. 538-540
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
10
Year of publication
1999
Pages
538 - 540
Database
ISI
SICI code
0741-3106(199910)20:10<538:EOVOIA>2.0.ZU;2-2
Abstract
The electron velocity overshoot phenomenon in the inversion layer is experi mentally investigated using a novel thin-film silicon-on-insulator (SOI) te st structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asy mmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L-eff = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing ch annel lengths.