New model extraction for predicting distortion in HEMT and MESFET circuits

Authors
Qu, GL Parker, AE
Citation
Gl. Qu et Ae. Parker, New model extraction for predicting distortion in HEMT and MESFET circuits, IEEE MICR G, 9(9), 1999, pp. 363-365
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
9
Year of publication
1999
Pages
363 - 365
Database
ISI
SICI code
1051-8207(199909)9:9<363:NMEFPD>2.0.ZU;2-Z
Abstract
A new method is presented for extracting Taylor series coefficients directl y from IM measurements for modeling IM distortion in HEMT and MESFET circui ts. It is based on an improved model that uses better simplifying assumptio ns. The method gives a substantially more accurate characterization, especi ally in the saturation region, required for amplifier designs.