Back-contacted solar cells offer multiple advantages in regard of reducing
module assembling costs and avoiding grid shadowing losses. The investigate
d emitter-wrap-through (EWT) device design has an electrical connection of
the front emitter and the rear emitter grid in form of small holes drilled
into the crystalline silicon wafer. The thus obtained cell structure is esp
ecially suitable for low-cost base material with small minority carrier dif
fusion lengths. Different industrially applicable solar cell manufacturing
processes for EWT devices are described and compared. The latest experiment
al results are presented and interpreted; especially the photo-current is f
ound to be distinctly increased. The relation between open circuit voltage
and rear side passivation is discussed based on two-dimensional (2-D) compu
ter simulations.