Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing

Citation
Rr. Bilyalov et al., Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing, IEEE DEVICE, 46(10), 1999, pp. 2035-2040
Citations number
21
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
10
Year of publication
1999
Pages
2035 - 2040
Database
ISI
SICI code
0018-9383(199910)46:10<2035:UOPSAC>2.0.ZU;2-R
Abstract
The latest results on the use of porous silicon (PS) as an antireflection c oating (ARC) in simplified processing for multicrystalline silicon solar ce lls are presented. The optimization of a PS selective emitter formation res ults in a 14.1% efficiency multicrystalline (5 x 5 cm(2)) Si cell with evap orated contacts processed without texturization, surface passivation, or ad ditional ARC deposition. Specific attention is given to the implementation of a PS ARC into an industrially compatible screenprinted solar cell proces s. Both the chemical and electrochemical PS ARC formation method are used i n different solar cell processes, as well as on different multicrystalline silicon materials. Efficiencies between 12.1 and 13.2% are achieved on larg e-area (up to 164 cm(2)) commercial Si solar cells.