A detailed model to improve the radiation-resistance of Si space solar cells

An accurate radiation degradation model, based on measured radiation damage s to devices and physical principles on radiation-induced defects in Si, ha s been established to improve the radiation-resistance of the Czochralski ( CZ)-grown and floating-zone (FZ)-grown single-crystal Si space solar cells. me have successfully carried out the optimization of radiation-resistant S i space solar cells by. taking into account the effective base carrier conc entration dependence of the most important analytical parameters, damage co efficient K-L for the minority-carrier diffusion length and carrier removal rate Re for majority-carrier, The model can be used to adequately predict the radiation degradation of the Si solar cells irradiated with a complete spectrum of electrons fluence. It has been established that the radiation-r esistance of the silicon solar cell is very dependent on effective carrier concentration under high fluence range and irradiation tolerance can be imp roved further by varying the base carrier concentration upon irradiation.