High current, thin silicon-on-ceramic solar cell

Citation
Dh. Ford et al., High current, thin silicon-on-ceramic solar cell, IEEE DEVICE, 46(10), 1999, pp. 2162-2164
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
10
Year of publication
1999
Pages
2162 - 2164
Database
ISI
SICI code
0018-9383(199910)46:10<2162:HCTSSC>2.0.ZU;2-A
Abstract
Thin-film polycrystalline silicon solar cells offer the potential to achiev e 19% efficient photovoltaic power conversion. Well-designed, 20-100 micron thick, thin-film silicon solar cells can achieve high efficiency by employ ing light trapping and back surface passivation. Low cost is achieved by mi nimizing the amount of feedstock silicon required per watt of power output. Electrically insulating supporting substrates enable monolithic. series-co nnected submodules. a solar cell device comprised of a 20 micron thick laye r of silicon grown on an insulating ceramic substrate, designed to effect l ight-trapping and hack surface passivation, has resulted in an independentl y verified short circuit current of 25.8 mA/cm(2). Analysis of the spectral response of the solar cell indicates the presence of both fight-trapping a nd hack surface passivation with an effective diffusion length in excess of twice the device thickness.