Silicon MOS controlled bipolar power switching devices using trench technology

The next generation of power devices are likely to extend MOS controlled bi polar (MCB) device concepts to cover very high voltage (up to 8 kV) applica tions. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current how. In this paper are g ive a review of development of trench gate IGBTs and we describe briefly ne w promising device structures based on trench technology which use PIN diod e and thyristor type carrier distributions to reduce power losses within th e device.