Fast power cycling test for insulated gate bipolar transistor modules in traction application

The numerous advantages of insulated gate bipolar transistor (IGBT) power m odules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead t o a mechanical stress that can result in a failure. Lifting of bond wires i s thereby the predominant failure mechanism. A fast power cycling test meth od activating the main failure mechanism has been developed which allows to reproduce millions of temperature changes in a short time. The applicabili ty of fast testing is supported by a mechanical analysis. Test results show the number of cycles to failure as a function of temperature changes for a n IGBT single switch. A descriptive model is deduced from the results.