Magnetoplastic effect in InSb

We have observed dislocation motion in InSb semiconductor crystals under th e action of a static magnetic field in the absence of a mechanical load. Th e dependence of the average dislocation travel distance and of the relative number of diverging and converging half-loops on the magnetic induction an d the "magnetic treatment" time is obtained. The activation energy of the m otion of diverging dislocations in a magnetic field in the temperature rang e 120-250 degrees C is estimated. Possible reasons for the observed phenome non are discussed. (C) 1999 American Institute of Physics. [S0021-3640(99)0 1316-X].