Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers

Citation
C. Ferrari et al., Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers, J CRYST GR, 205(4), 1999, pp. 474-480
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
205
Issue
4
Year of publication
1999
Pages
474 - 480
Database
ISI
SICI code
0022-0248(199909)205:4<474:IBSRXT>2.0.ZU;2-I
Abstract
The synchrotron radiation plane wave topography and the Rutherford backscat tering technique have been used to investigate the lattice tilts between su bstrates and layers introduced by the preferential orientation of the Burge rs vectors of the misfit dislocations in compositionally graded InGaAs/GaAs heterostructures. A monotonic change of the lattice tilt along the sample surface producing in average a concave curvature of the buffer layer lattic e has been found with a nearly complete alignment of the Burgers vector of the misfit dislocations at the sample edges. The topographic observations s howed that the buffer layers can follow a nearly continuous curvature or ca n be sub-divided in large domains with different average lattice tilt. The models recently proposed for the formation of tilt in partially released st ructures are not able to explain the present observation of a lattice tilt varying coherently along the sample surface. (C) 1999 Elsevier Science B.V. All rights reserved.