The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has bee
n investigated. The as-grown islands were shaped like nanowires and formed
dense arrays over the entire surface in the 3-6 monolayer InAs deposition r
ange. The wires were oriented along the [(1) over bar 1 0] direction. Trans
mission electron microscopy images confirm that the wires are coherently gr
own on the substrates. Our results suggest that the coherent wire-shaped is
land formation may be a possible method to fabricate self-organized InAs na
nowires. (C) 1999 Elsevier Science B.V. All rights reserved.