Si3N4-whisker/Si growth interface study using EPMA chemical shift mapping of Si-K-beta bands

Authors
Ye, J Okamura, T Ishikawa, I Furuya, K Matsuo, K Munakata, F Akimune, Y
Citation
J. Ye et al., Si3N4-whisker/Si growth interface study using EPMA chemical shift mapping of Si-K-beta bands, J MAT SCI L, 18(20), 1999, pp. 1701-1703
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
18
Issue
20
Year of publication
1999
Pages
1701 - 1703
Database
ISI
SICI code
0261-8028(1999)18:20<1701:SGISUE>2.0.ZU;2-5