Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate

Authors
Boudart, B Gaquiere, C Constant, M Lorriaux, A Lefebvre, N
Citation
B. Boudart et al., Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate, J RAMAN SP, 30(8), 1999, pp. 715-719
Citations number
20
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF RAMAN SPECTROSCOPY
ISSN journal
03770486 → ACNP
Volume
30
Issue
8
Year of publication
1999
Pages
715 - 719
Database
ISI
SICI code
0377-0486(199908)30:8<715:RCOSDO>2.0.ZU;2-P
Abstract
Effects of SiNx deposition on undoped Ga0.47In0.53As bulk layer grown on In P substrate were investigated using Raman spectroscopy, No Raman shift as a result of strain induced from the dielectric deposition was observed in th e Ga0.47In0.53As material, whatever the thickness and the temperature depos ition used in the technological process, Some changes in the Raman spectra due to surface disorder effects were evidenced for the Ga0.47In0.53As: samp les passivated at 300 degrees C. These effects were confirmed by photocarri er-assisted experiments. Copyright (C) 1999 John Wiley & Sons, Ltd.