C. Beeli et al., Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon, MATER CHAR, 42(4-5), 1999, pp. 241-247
Nearly spherical voids, with a size on the order of some tens of nanometers
, are defects that have recently attracted a renewed interest, due to their
capability to getter impurities and point defects in silicon. High-resolut
ion electron holography is employed here to study the three-dimensional con
figuration of nearly spherical cavities obtained by 100keV P+ ion bombardme
nt of a silicon wafer using an ion beam with a power density of about 40 W/
cm(2) for 4 sec. Reconstructed phase maps have been used to obtain the qual
itative topography of the cavity shape as well as quantitative measurements
of the depth variations. Faceting of the nearly spherical voids is discuss
ed in detail. (C) Elsevier Science Inc., 1999. All rights reserved.