Electronic transport in degenerate amorphous oxide semiconductors

The fundamental parameters associated with electronic transport, that is th e scattering time, mean free path, effective mass and hence microscopic mob ility for free electrons, have been estimated from the free-carrier absorpt ion, Hall effect and de conductivity in an optically transparent and highly conducting (degenerate) new class of amorphous oxides. No sign anomaly is observed in the Hall effect and the optical conductivity measured at room t emperature obeys the classical Drude formula. The dc conductivity is propor tional to temperature below room temperature, suggesting that the transport is in a weak-localization regime at these temperatures.