LIGHT-DIFFRACTION ON GUNN-DOMAIN GRATINGS

We present a different way of creating a sequence of quasilocalized Gu nn domains in biased bulk GaAs and InP crystals due to illumination by a pulse of light interference field. Theoretical calculations of hot carrier transport in nonuniform electric fields revealed criteria of b ipolar Gunn-domain formation with an electro-optic refractive index mo dulation exceeding one by free carriers. The numerical data are in goo d agreement with the experimentally observed enhancement of light self -diffraction efficiency on transient grating by an external microwave field.