SURFACE ATOMIC-STRUCTURE OF C(2X2)-SI ON CU(110)

The technological importance of Schottky barriers has led to many expe riments of metal-on-semiconductor systems. Here we present an example of the inverse case by depositing a semiconductor on a metal, studying the very early stages of the metal-semiconductor interface formation. We show that 0.5 monolayers of Si on Cu(110) form an ordered c(2 X 2) overlayer and resolve its geometrical structure. Using full-hemispher ical x-ray photoelectron diffraction, we find that Si atoms form an al most coplanar layer, replacing one out of two Cu surface atoms.