Ellipsometry and Raman study on hydrogenated amorphous carbon (a-C : H) films deposited in a dual ECR-r.f. plasma

Citation
J. Hong et al., Ellipsometry and Raman study on hydrogenated amorphous carbon (a-C : H) films deposited in a dual ECR-r.f. plasma, THIN SOL FI, 352(1-2), 1999, pp. 41-48
Citations number
49
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
352
Issue
1-2
Year of publication
1999
Pages
41 - 48
Database
ISI
SICI code
0040-6090(19990908)352:1-2<41:EARSOH>2.0.ZU;2-X
Abstract
Hydrogenated amorphous carbon (a-C:H) films were deposited from methane in a dual microwave electron cyclotron resonance (ECR) radio frequency (r.f.) plasma by applying an independently controlled r.f. substrate bias voltage. In situ real-time ellipsometry was used to monitor the evolution of the fi lm growth during the deposition. The combined in situ/ex situ ellipsometry and Raman spectroscopy measurements show that the deposited film properties change from polymer-like to diamond-like depending on the presence of the applied bias voltage. The spectroscopic ellipsometry analysis exhibits a de crease in the optical bandgap energy and an increase in the sp(3)/sp(2) rat io with the r.f. bias voltage. Raman spectra have been analyzed using a fou r-Gaussian deconvolution procedure which allowed the assignment of the two D and G peaks as well as two additional bands at around 1170 and 1480 cm(-1 ) suggesting the presence of a diamond phase enhanced by the presence of th e r.f. bias voltage. (C) 1999 Elsevier Science S.A. All rights reserved.