a-SiCx : H films deposited by plasma-enhanced chemical vapor deposition atlow temperature used for moisture and corrosion resistant applications

Amorphous hydrogenated silicon carbide (a-SiCx:H) films were fabricated via plasma-enhanced chemical Vapor deposition (PECVD) at a low substrate tempe rature. The properties of the him and their correlation with the deposition parameters were investigated with emphasis on moisture and corrosion resis tance. The films can be deposited with good uniformity and repeatability. T he moisture resistance is mostly influenced by the reactant gas flow ratio; increasing the silane flow enhances the moisture barrier ability of the fi lm. The deposited film is chemically inert, is not oxidized by moisture at 85 degrees C, and remained unattacked after 2 months immersion in water at room temperature. The film is pinhole-free, and has excellent corrosion res istant properties. Thus this material is deemed a good candidate film for m oisture and corrosion resistant applications. (C) 1999 Elsevier Science S.A . All rights reserved.